Preparation and Characterization of Copper Telluride Thin Films
Abstract
Copper telluride thin lms were deposited using a modi ed chemical technique with copper(II) sulphate pentahydrate [CuSO45H2O] and sodium tellurite [Na2TeO3] as cationic and anionic sources, respectively. The modi ed chemical technique is based on immersing the substrate in distinct cationic and anionic precursors. The preparative parameters, such as concentration, pH, immersion time, immersion cycles, and so on, were tuned to produce high-quality copper telluride thin lms at room temperature. X-ray di raction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDAX) were used to study the lms’ structural, compositional, optical, and electrical transport properties.
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